Influence of high-temperature AIN buffer thickness on the properties of GaN grown on Si(1 1 1)

The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer

Anri Watanabe, Tetsuya Takeuchi, Koji Hirosawa et al. · Journal of Crystal Growth · 1993 · 273 citations

Engineering, Materials Engineering, Materials Science +13

High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia

S. A. Nikishin, N. N. Faleev, Vladimir G. Antipov et al. · Applied Physics Letters · 1999 · 201 citations

Engineering, Materials Engineering, Materials Science +14

Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors

H. Marchand, Lingyan Zhao, N. Zhang et al. · Journal of Applied Physics · 2001 · 181 citations

Engineering, Materials Engineering, Materials Science +17

Thermal stability of GaN on (1 1 1) Si substrate

Hiroyasu Ishikawa, Kensaku Yamamoto, Takashi Egawa et al. · Journal of Crystal Growth · 1998 · 179 citations

Engineering, Materials Engineering, Materials Science +13

GaN heteroepitaxial growth on silicon nitride buffer layers formed on Si (111) surfaces by plasma-assisted molecular beam epitaxy

Yoshinobu Nakada, Igor Aksenov, Hajime Okumura · Applied Physics Letters · 1998 · 151 citations

Engineering, Materials Engineering, Materials Science +17