Publication | Closed Access
Influence of high-temperature AIN buffer thickness on the properties of GaN grown on Si(1 1 1)
30
Citations
20
References
2003
Year
Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsAluminum Gallium NitrideGan Power DeviceCategoryiii-v SemiconductorOptoelectronics
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