Above-room-temperature 3–12μm Si emitting arrays

Abstract

The design and parameters are presented for 16-element infrared (IR, 3–12μm) emitting arrays based on Si p+in+ structures and above-room-temperature (300K<T<480K) operated by the contact double injection. The device principle is in modulation of thermal emission beyond the fundamental absorption edge by controlling free charge carrier concentration in a base. Nearly 1.0mW output power and 420K apparent temperature of IR radiation could be achieved with ∼0.8% external power efficiency. This represents the longer wavelengths, higher operating temperatures, and output power from Si spontaneous emitters ever reported.