Applied Physics Letters · 1985 · 29 citations · 10 references
SemiconductorsPhotonicsElectrical EngineeringTemporal CharacteristicsEngineeringPhotoluminescencePhysicsSuperlattice Intrinsic RegionsOptical PropertiesWide-bandgap SemiconductorApplied PhysicsTemporal ResponseOptoelectronicsOptical AmplifierBand Edge
We report on measurements of the spectral and the temporal response of AlGaAs/GaAs p-i-n photodetectors with superlattice intrinsic regions grown by molecular beam epitaxy. The feasibility for high-speed applications is demonstrated by a time constant limited impulse response of 200 ps (full width at half-maximum) when excited near the band edge with 100 ps optical pulses. We observed the theory-predicted and recently verified voltage tunability of the band edge with clearly resolved excitonic resonances. The responsivity was measured to be 0.2 A/W.
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Variational calculations on a quantum well in an electric field
G. Bastard, E. E. Méndez, L.L. Chang et al. · Physical review. B, Condensed matter · 1983 · 782 citations