Plasma Edge Reflectance Measurements in Ga_<i>x</i>In_{(1−<i>x</i>)}As and InAs_<i>x</i>Sb_{(1−<i>x</i>)} Alloys

Abstract

Room temperature measurements of plasma reflectance have been made on polycrystalline homogeneous n type samples of Ga x In (1−x) As and InAs x Sb (1−x) alloys. An analysis for the case of general degeneracy in a Kane-type conduction band has been developed, to allow the determination of electron effective mass (m 0 */m) at the bottom of the conduction band. Hence values of m 0 */m vs. x have been determined for both alloy systems. From the experimental data, values of relaxation time and optical mobility have also been calculated.