ACS Applied Materials & Interfaces · 2015 · 407 citations · 28 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsMaterials PhysicsNanomaterialsDielectricsHigh-frequency Semiconductor DevicesMicrowave MaterialsNanostructured Electronic MaterialsSemiconductor Device MaterialsSemiconductor NanomaterialsLoss TangentMicrowave Absorbing MaterialsMicrowave AbsorptionMicrowave Dielectric PropertiesNickel Oxide NanomaterialsSemiconductor Materials For Microwave DevicesSilicon CarbideSilicon Carbide (Sic) Materials
We fabricated NiO nanorings on SiC, a novel hierarchical architecture, by a facile two-step method. The dielectric properties depend on temperature and frequency in the range from 373 to 773 K and X band. The imaginary part and loss tangent increase more than four times and three times with increasing temperature, respectively. The architecture demonstrates multirelaxation and possesses high-efficient absorption. The reflection loss exceeds -40 dB and the bandwidth covers 85% of X band (approximately -20 dB). The synergistic effect between multirelaxation and conductance is beneficial to the microwave absorption. Our findings provide a novel and feasible strategy to tune microwave absorption.
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