Determination of the Effective Mass in n‐Type InSb by Means of Magneto‐Plasma Reflection

Abstract

Abstract The refractive index for intraband transitions in degenerate semiconductors in the presence of a magnetic field is calculated for spherical and nonparabolical energy bands. The results are used for the description of plasma and magneto‐plasma reflection, and for the determination of the effective mass of carriers in heavily doped InSb. Plasma and magneto‐plasma reflections are observed in n‐type InSb with carrier concentrations from 10 18 to 10 19 cm −3 . The values of the effective mass of electrons confirm Kane's band‐structure up to concentrations exceeding 10 19 cm −3 .