Publication | Closed Access
Development of a Laboratory EXAFS Facility and Its Application to Amorphous GeSe Semiconductors
38
Citations
20
References
1982
Year
Energy DispersionX-ray SpectroscopyEngineeringPosition DispersionX-ray ImagingSemiconductorsOptical PropertiesX-ray TechnologyInstrumentationMolecular Beam EpitaxyHealth SciencesMaterials ScienceSemiconductor TechnologyPhysicsX-ray SpectrometerSemiconductor MaterialSemiconductor Device FabricationX-ray Free-electron LaserCrystallographyAmorphous Gese SemiconductorsSpectroscopyLaboratory Exafs FacilityApplied PhysicsX-ray DiffractionAmorphous SolidX-ray Optic
A new type of X-ray spectrometer and detector system for performing extended X-ray absorption fine structure measurements in the laboratory has been developed. The spectrometer is equipped with an asymmetrically-cut flat crystal monochromator in the magnifying mode and converts the energy dispersion to position dispersion using a position-sensitive detector. Two advantages of this apparatus are that it has no moving parts and that it makes the X-ray path shorter. The application of the spectrometer to amorphous GeSe semiconductors is also presented to show its usefulness.
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