Ga₂Te₃Sb₅—A Candidate for Fast and Ultralong Retention Phase‐Change Memory

Abstract

Incongruent melting phenomenon shows the feasibility of multilevel control using the phase-change material Ga2Te3Sb5 (Ga-TS). Electrical results showed that Ga-TS cells require 25% less RESET current than do GST cells. Meanwhile it possesses a high programming speed, ultralong data retention extrapolated to one million years at 120 °C, and superior thermal properties for phase-change random-access-memory applications.