Publication | Closed Access
Effects of annealing in an oxygen ambient on electrical properties of ohmic contacts to p-type GaN
146
Citations
14
References
1999
Year
Materials ScienceWide-bandgap SemiconductorElectrical EngineeringEngineeringOxygen AmbientApplied PhysicsAluminum Gallium NitrideGan Power DeviceGallium OxideOhmic ContactsCategoryiii-v SemiconductorOptoelectronicsP-type Gan
| Year | Citations | |
|---|---|---|
Page 1
Page 1