Applied Physics Letters · 1978 · 39 citations · 10 references
Natural SciencesPhysicsCondensed Matter PhysicsRecombinationSemiconductor MaterialsElectronic Band StructureWide Band Gap SemiconductorsWide-bandgap SemiconductorsBand GapBand Gap EnergyCharge Recombination PathwaysElectron-hole RecombinationExciton Binding EnergyExcitonsRadiative RecombinationRecombination Mechanisms
We have observed the radiative recombination of electrons, attached to nitrogen pairs, with holes on neutral acceptors. The acceptor binding energies are found to be 102.5±1 meV for Cd, 70.1±1 meV for Zn, and 54.7±1 meV for C, 8.3 meV larger than previously accepted values. This result implies corresponding increases in the band gap and exciton binding energy, to 2.350±0.002 eV and 22±2 meV, respectively, at 2 K.
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Isoelectronic Traps Due to Nitrogen in Gallium Phosphide
D. G. Thomas, J. J. Hopfield · Physical Review · 1966 · 595 citations
Natural Sciences, Chemistry, Physics +17
Intrinsic Absorption-Edge Spectrum of Gallium Phosphide
P. J. Dean, D. G. Thomas · Physical Review · 1966 · 310 citations
New Red Pair Luminescence from GaP
C. H. Henry, P. J. Dean, J. D. Cuthbert · Physical Review · 1968 · 215 citations
Natural Sciences, Chemistry, Physics +17