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Electronic optical bistability in a GaAs/AlGaAs strip-loaded waveguide
34
Citations
10
References
1987
Year
PhotonicsElectrical EngineeringOptical MaterialsGaas/algaas Multiple QuantumElectronic OriginOptical BistabilityEngineeringOptical PropertiesApplied PhysicsElectronic Optical BistabilityGuided-wave OpticPhotonic Integrated CircuitQuantum Photonic DeviceMicrowave PhotonicsOptoelectronicsCompound Semiconductor
Optical bistability of electronic origin has been observed in strip-loaded waveguides in a GaAs/AlGaAs multiple quantum well structure. Single-mode waveguides were fabricated by reactive ion etching of an epitaxial AlGaAs layer above the quantum wells. The waveguides were operated as nonlinear Fabry–Perot étalons with 30% reflectors provided by the cleaved ends. Phase shifts of 2π were observed in some devices.
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