Publication | Closed Access
Study of band offsets in CdF2/CaF2/Si(111) heterostructures using x-ray photoelectron spectroscopy
56
Citations
0
References
1995
Year
Materials ScienceIi-vi SemiconductorEngineeringPhysicsNanoelectronicsValence Band OffsetsSurface ScienceApplied PhysicsX-ray Photoelectron SpectroscopyEnergy Band DiagramSemiconductor MaterialMultilayer HeterostructuresBand OffsetsMolecular Beam EpitaxyEpitaxial GrowthOptoelectronicsCompound Semiconductor
The valence band offsets at the heterointerfaces of the CdF2/CaF2/Si(111) structure grown by molecular beam epitaxy were evaluated using x-ray photoelectron spectroscopy, and the energy band diagram of this heterostructure was proposed. It was found that the interface of CdF2/CaF2 has large conduction band offset: 2.9 eV, and the energy level of CdF2 conduction band edge is below that of Si.