Rapid Melting and Regrowth Velocities in Silicon Heated by Ultraviolet Picosecond Laser Pulses

Abstract

Direct measurements of the silicon liquid/solid interface velocity have been made during both melt-in and regrowth for crystalline silicon irradiated with a pulsed (15 psec) ultraviolet laser. The liquid films produced were up to 40 nm thick and were fully amorphized upon resolidification. Above threshold, the regrowth velocity was 25 m/sec, independent of laser fluence. The results imply a nonlinear relationship between supercooling and interface velocity.