TFET Inverters With n-/p-Devices on the Same Technology Platform for Low-Voltage/Low-Power Applications

Abstract

This paper investigates feasible inverter configurations based on co-optimized n- and p-type tunnel field-effect transistors (TFETs) integrated on the same InAs/Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.05</sub> Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.95</sub> Sb platform. Based on 3-D full-quantum simulations, the considered devices feature steep subthreshold slopes and relatively high on- currents and are combined into two inverter designs. Benchmarking against aggressively scaled CMOS logic based on multigate architectures highlights potential of the proposed TFET implementations to perform up to 10× and 100× faster in low operating power and low standby power environments, respectively. The comparison is conducted at low supply voltages (VDD=0.25 V) and for equal levels of static power consumption. The proposed TFET-based platform is thus expected to be a good candidate for low-voltage/low-power applications in near-future technology generations.