Journal of Applied Physics · 1990 · 54 citations · 20 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsSemiconductor MaterialsSolid State PhysicsAb Initio MethodsDefect ModelingDefect ThermodynamicsDefectsDefects In Electronic MaterialsSemiconductor DefectsAlloy SemiconductorsAntisite DefectsDefect EquilibriaDefect LevelsDefect Levels In SemiconductorsDefect Thermodynamics Of SemiconductorsElectronic DefectsNative Defects
Defect concentrations in AlxGa1−xSb which is in equilibrium with a liquid phase are calculated. When the liquid phase is Ga rich, a Ga antisite (Ga2−Sb) or an Al antisite (Al2−Sb) is dominant, and the concentrations of vacancies are much smaller than the antisite concentrations. Ga2−Sb is dominant in GaSb equilibrated with a Sb-rich solution, but the concentration of Sb antisites comes close to that of Ga2−Sb as temperature is lowered. For x larger than 0.6, a group-III vacancy is the predominant defect in the case of Sb-rich solutions. Calculated net acceptor concentrations agree well with those determined experimentally. A complex defect composed of GaSb and a Ga vacancy, which have been taken as the dominant residual acceptor, is expected to be negligible.
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