High‐Gain and Low‐Driving‐Voltage Photodetectors Based on Organolead Triiodide Perovskites

Abstract

Solution-processed organometal trihalide perovskite photodetectors show a high photoconductive gain of above 400 across the UV to NIR range at a very low bias of −1 V. The charge traps caused by large concentrations of Pb2+ cations at the top surface of the perovskite film are critical for achieving high gain in these devices via a trapped-hole-induced electron injection mechanism. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.