Junction Leakage Current in BF⁺ ₂-Implanted, Rapid-Thermal-Annealed Diodes

Abstract

Junction leakage current was studied in shallow p + -n diodes formed by using BF + 2 -implantation and rapid thermal annealing (RTA). It is s hown that the bulk leakage component is 3 to 4 times larger in BF + 2 -implanted diodes than in B + -implanted diodes. Dislocations created in the BF + 2 -implanted layer during the RTA are not the direct cause of this leakage increase. It was also found that the surface leakage component is increased by the RTA. Rapid heat treatment may increase interface states and/or g-r centers in the Si/SiO 2 interface layer.