Evidence for charge collection efficiency recovery in heavily irradiated silicon detectors operated at cryogenic temperatures

Trapping induced Neff and electrical field transformation at different temperatures in neutron irradiated high resistivity silicon detectors

V. Eremin, Zizhou Li, I Iljashenko · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 1995 · 103 citations

Engineering, Electrical Engineering, Physics +14

Study of characteristics of silicon detectors irradiated with 24 GeV/c protons between −20°C and +20°C

F. Lemeilleur, Samantha Bates, A. Chilingarov et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 1995 · 51 citations · Full text

Engineering, Electrical Engineering, Nuclear Engineering +14

Electrical characteristics and charge collection efficiency of silicon detectors irradiated with very high neutron and proton fluences

E. Borchi, M. Bruzzi, C. Leroy et al. · Nuclear Physics B - Proceedings Supplements · 1998 · 17 citations

Engineering, Electrical Engineering, Physics +17

Effect of intense proton irradiation on properties of Josephson devices

S. Pagano, R. Cristiano, Luigi Frunzio et al. · IEEE Transactions on Applied Superconductivity · 1997 · 16 citations

Engineering, Electrical Engineering, Physics +17

Radiation damage on silicon after very high neutron fluence irradiation

U. Biggeri, E. Borchi, M. Bruzzi et al. · Nuclear Physics B - Proceedings Supplements · 1998 · 13 citations

Engineering, Materials Engineering, Materials Science +12