2007 · 37 citations · 8 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesCmos Circuit DesignMicrowave AmplifiersMicrowave Integrated CircuitsMicrowave Semiconductor DevicesPower AmplifiersRadio-frequency Integrated CircuitsBalanced AmplifiersBandwidthCmos Microwave AmplifiersGainMillimeter-wave Integrated CircuitsPower Amplifier DesignRadio Frequency Power AmplifiersWideband Amplifiers
This paper presents a Q-band balanced medium power amplifier fabricated using standard 90-nm 1P9M CMOS technology. The balanced amplifier, which is constructed with two broadband amplifiers and two broadside couplers using thin-film microstrip (TFMS) line technique, has a compact chip size of 0.78 x 0.92 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . The MMIC demonstrates a measured gain of 14.5 dB at 48 GHz. With the feature of the balanced amplifier, the MMIC has a 3-dB bandwidth up to 37.2 % from 35 to 51 GHz with flat gain and return loss frequency response. Furthermore, the balanced amplifier delivers a saturation output power of 10.6 dBm with 8% PAE and OPldB is 7.5 dBm.
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C.H. Doan, Sohrab Emami, Ali M. Niknejad et al. · IEEE Journal of Solid-State Circuits · 2005 · 710 citations
Millimeter-wave CMOS circuit design
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