Journal of Applied Physics · 1991 · 35 citations · 9 references
Natural SciencesMaterials EngineeringMaterials ScienceCeramic MaterialsCeramicsThin FilmsSemiconductor Thin FilmsThin-film DepositionCeramic Thin FilmsOxide CeramicsRutherford Backscattering SpectrometryScanning Transmission Electron MicroscopySubstrate Temperature EffectsThin Film CeramicsThin-film Growth MechanismsX-ray Diffraction Analysis
We have investigated the formation of MgO and yttria-stabilized ZrO2(YSZ) thin films on Si(100) substrates using laser (wavelength 248 nm pulse duration 40 ns, and repetition rate 5 Hz) physical vapor deposition method. The films were deposited from solid targets of MgO and polycrystalline YSZ in appropriate ambient with the substrate temperature optimized at 650 °C. The absorption coefficient in the MgO target was enhanced by Ni doping. The films were characterized using scanning and transmission electron microscopy (plan and cross section), x-ray diffraction, and Rutherford-backscattering spectrometry. The films were found to be polycrystalline with a texture. The thin films of MgO exhibited 〈111〉 texture, while the YSZ films contained both 〈111〉 and 〈200〉 textures.
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The dielectric properties of yttria-stabilized zirconia
Michael T. Lanagan, Joyce K. Yamamoto, A. S. Bhalla et al. · Materials Letters · 1989 · 94 citations