Segregation and transport coefficients of impurities at the Si/SiO2 interface

Abstract

Segregation and transport coefficients of impurities at the Si/SiO2 interface have been studied. A brief model has been proposed which relates the two coefficients to the oxidation rate and the impurity concentrations at both sides of a Si/SiO2 interface. The model enables us to obtain the transport coefficients from the measured impurity profiles for the first time. The transport coefficients of arsenic and phosphorus are, for example, 0.12 and 5.0 μm/min at 1100 °C, respectively. The segregation coefficients can be also calculated from this model. They are more than 1000 for arsenic and phosphorus, and less than 1 for boron at 1000–1100 °C.