Focused ion beam tomography of a microelectronic device with sub-2-nm resolution

Abstract

A method for implementing focused ion beam tomography with two dimensional images separated by less than 2nm per slice has been developed. The calculated resolution of the voxel dataset is estimated to be less than 1×1×2nm3 ∼2nm3. A programed antifuse structure in a field programable gate array antifuse structure was analyzed using this method of imaging, showing the individual nanoscale components of the antifuse structure and the fusing region.