Semiconductor Science and Technology · 1992 · 18 citations · 11 references
Natural SciencesPhysicsCondensed Matter PhysicsQuantum MechanicsSemiconductor MaterialsAb Initio MethodsElectronic Band StructureElectronic Structure Of SolidsQuantum WellsSemiconductor PhysicsStark EffectBand Structure CalculationBand TheoryQuantum Well Band StructureSuperlattice GrowthSuperlatticesTight-binding ApproximationTight-binding ModelsTight-binding Theory
The electronic band structures of GaAs/(GaAl)As superlattices under a uniform electric field along the growth axis are calculated on the basis of a microscopic tight-binding (TB) description. Finite sets of quantum wells are considered in order to apply the TB method to a system without translational symmetry. The main effect of the electric field appears as diagonal elements of the TB matrix, resulting in modulation of miniband dispersion and localization of wavefunctions (Wannier-Stark effect). The calculated results are found to be in good agreement with the experimental observation by electroreflectance measurements.
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Observation of the Wannier-Stark Quantization in a Semiconductor Superlattice
P. Voisin, J. Bleuse, C. Bouche et al. · Physical Review Letters · 1988 · 453 citations