Journal of the American Chemical Society · 2005 · 83 citations · 19 references
Natural SciencesMaterials EngineeringMaterials ScienceMaterials ChemistryNanomaterialsSemiconductor MaterialsNanomaterials For Energy StorageNanoporous MaterialsNanostructured Energy MaterialsSemiconductor NanomaterialsUltraviolet-visible SpectroscopyBand GapC:n:p StoichiometryField EmissionHydrogen Energy StorageHydrogen Energy SystemsNanostructuresOptical Band Gap
Porous boron carbonitride nanotubular fibers with BCN stoichiometry and homogeneous B, C, and N species distribution were fabricated via the CVD method. Spatially resolved cathodoluminescence measurements on individual nanostructures revealed intense ultraviolet emission centered at 319 nm, suggesting the characteristics of a semiconductor with a band gap of 3.89 eV. It is believed that the present nanostructures may have a variety of applications in ultraviolet optical devices, hydrogen storage systems, and field emission apparatus.
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Nasreen G. Chopra, R.J. Luyken, K. Cherrey et al. · Science · 1995 · 3.1K citations
Stability and Band Gap Constancy of Boron Nitride Nanotubes
Xavier Blase, Ángel Rubio, Steven G. Louie et al. · Europhysics Letters (EPL) · 1994 · 1.5K citations