Determination of minority-carrier diffusion length in indium phosphide by surface photovoltage measurement

Abstract

The surface photovoltage technique has been employed to measure the hole diffusion length on three n-type InP specimens. The hole diffusion length was found to be 1.8 μm for specimens with (111) orientation and 1.4 μm for specimens with (100) orientation. The measured hole diffusion length was found to be independent of the surface conditions.