Self-organized quantum wires formed by elongated dislocation-free islands in (In,Ga)As/GaAs(100)

Abstract

Long and fairly uniform quantum wire arrays have been fabricated by the growth of (In,Ga)As/GaAs multilayer structures. The structural properties of the quantum wires are characterized by atomic force microscopy, x-ray diffractometry, and transmission electron microscopy. The lateral carrier confinement in the quantum wires is confirmed by linear polarization dependent photoluminescence (PL) and magneto-PL measurements.