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Self-organized quantum wires formed by elongated dislocation-free islands in (In,Ga)As/GaAs(100)

Wenquan Ma, R. Nötzel, A. Trampert, M. Ramsteiner, Haijun Zhu, H.‐P. Schönherr, K. H. Ploog

Applied Physics Letters · 2001 · 46 citations · 11 references

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Abstract

Long and fairly uniform quantum wire arrays have been fabricated by the growth of (In,Ga)As/GaAs multilayer structures. The structural properties of the quantum wires are characterized by atomic force microscopy, x-ray diffractometry, and transmission electron microscopy. The lateral carrier confinement in the quantum wires is confirmed by linear polarization dependent photoluminescence (PL) and magneto-PL measurements.

References

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