Wetting layer carrier dynamics in InAs/InP quantum dots

Abstract

The electronic coupling between InAs/InP quantum dot (QD) array and its wetting layer (WL) is studied by continuous wave and time resolved photoluminescence. The carrier dynamics is explained by the existence of two regimes in the WL: at low QD density the carrier dynamics is dominated by the diffusion and at high density when the distance between QDs is comparable to the carrier mean free path in the WL the quantum capture into QDs dominates. From the identification of these two regimes the carrier mean free path in the WL is estimated to about 30 nm.