Epitaxial Growth of Bi-Sr-Ca-Cu-O Thin Films by Molecular Beam Epitaxy Technique with Shutter Control

Abstract

Thin films of Bi 2 (Sr, Ca) 3 Cu 2 O y have been prepared in situ by a molecular beam epitaxy technique in an ozone atmosphere of 4×10 -4 Pa. The molecular beams were shutter controlled and films were deposited layer by layer. In situ reflection high energy electron diffraction (RHEED) showed the formation of the perovskite-related structure even at the initial deposition (one unit cell). The resistance of one of the films became zero at 30 K without heat treatment in oxygen.