Electrical and optical characterizations of β-Ga₂O₃:Sn films deposited on MgO (110) substrate by MOCVD

Abstract

Tin-doped β-Ga2O3 (β-Ga2O3:Sn) films doped with different tin concentrations were deposited on MgO (110) substrates by metal organic chemical vapor deposition (MOCVD) at 700 °C. The effect of doping on the structural, electrical and optical properties of the films was investigated. The 10% Sn-doped film exhibited the best electrical conductivity properties with the lowest resistivity about 5.21 × 10−2 Ω cm, which is over ten orders of magnitude lower than the un-doped film. Micro-structural analysis revealed that the film with 10% Sn content had a clear in-plane relationship of β-Ga2O3 (100) ‖ MgO (110) with β-Ga2O3 (01) ‖ MgO (111). The average transmittance of the samples in the visible range exceeded 87% and the optical band gap of the films varied from 4.12 to 4.80 eV.