Semiconductor Science and Technology · 1993 · 31 citations · 22 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor MaterialsAtomic ExcitationElectronic Band StructureElectronic Excited StatesOptical Properties Of SemiconductorsSemiconductor HeterostructuresSemiconductor PhysicsElectroluminescenceExcitation Spectra AnalysisExcitonic EffectsExcitonic MaterialsExcitonsMolecular Beam EpitaxyPhotoluminescencePhotoluminescence Spectroscopy
Temperature- and excitation-dependent photoluminescence measurements have been carried out on 0.7-5 mu m thick heteroepitaxial InAs layers grown by molecular beam epitaxy (MBE). Excitonic photoluminescence with linewidths down to 5 meV reveals the high optical quality of the epilayers despite the 7% mismatch between the InAs and the GaAs substrates. Peaks at 403 and 391 meV, which quench rapidly with increasing temperature, are attributed to bound excitons, and a sharp (7 meV FWHM) intense line at 417 meV is tentatively attributed to free excitonic recombination. A broad 18 meV wide band (peaking at 378 meV) which blue shifts with increasing excitation, characteristic of a donor-acceptor pair transition band, is reported for the first time in InAs.
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Electrical and magneto-optical of MBE InAs on GaAs
P D Wang, S. N. Holmes, Tan Le et al. · Semiconductor Science and Technology · 1992 · 82 citations