Microwave-assisted transport in a single-donor silicon quantum dot

Abstract

Single donors in semiconductor nanostructures represent a key element to develop spin-related quantum functionalities in atomic-scale devices. Quantum transport through a single arsenic donor in the channel of a silicon nano field-effect transistor under microwave irradiation is investigated. The device is characterized at mK temperatures in the regime of Coulomb blockade. Photon-assisted tunneling and microwave-induced electron pumping regimes are revealed, respectively, at low and high microwave power. At sufficiently high power, the microwave irradiation induces tunneling through the first excited energy level of the ${D}_{0}$ energy of the donor. Such microwave-assisted transport at zero bias enhances the resolution of the spectroscopy of the energy levels of the donor.