Journal of The Electrochemical Society · 1963 · 59 citations · 0 references
Natural SciencesChemistryMaterials ScienceElectrochemistrySemiconductor MaterialsThin FilmsElectrical CharacterizationOptical Properties Of SolidsOptical Thin FilmsSemiconductor Crystal GrowthThin Film Electrical PropertiesThin Film Optical PropertiesFilm Breakdown MechanismsFilm FormationFilm ThicknessOptical PropertiesPassive FilmPassive Film BreakdownPassive Film FormationPassive Film Growth
Polarized light was used to measure the thickness and optical properties of passive films as they were forming while simultaneous electrochemical measurements were being made. The film formation studies showed that a change in film thickness of 15–20Aå was associated with the onset of a passive potential. A direct, logarithmic‐type law governed the growth of a semiconductor film with crystallographic orientation of the substrate having little effect.