Journal of Micromechanics and Microengineering · 2007 · 80 citations · 22 references
EngineeringElectrical EngineeringActuatorsMicroelectromechanical SystemsMicrofabricationElectrostatic ActuationElectrostatic ActuatorsMems CharacterizationMems FabricationMems SwitchesRf MemsElectrostatic Mems ActuatorsLow-voltage ActuationMicromachined Switch DesignProcess-induced Residual StressesResidual Stress ModelingRf Mems FabricationRf Mems SwitchesRf Switches
This paper presents the design, fabrication and characterization of an RF MEMS switch. Low actuation voltage and high isolation of the switch were achieved by exploiting buckling and bending effects induced by well-controlled residual stress. The effects of residual stress on improving the switch performance have been investigated using both analytical and numerical methods. The proposed RF switch has been fabricated by surface micromachining. The minimum actuation voltage of the fabricated switch was measured to be 10.2 V. At a 5 GHz signal frequency, the measured insertion loss and isolation are 0.21 dB and −44 dB, respectively. These results demonstrate that low voltage and high isolation of RF MEMS switches can be achieved with proper utilization of residual stresses.
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