Review of Scientific Instruments · 1967 · 127 citations · 12 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsPressure DistributionPressure MeasurementPressure MetrologyPressure SensorsPressure TestingSemiconductor Device MaterialsPiezoresistive MaterialsPiezoresistive Pressure SensingPressure Test CalibrationResistivitySemiconductor NanostructuresSemiconductor TechnologyStress DistributionStress Measurement
A technique has been evolved to generate hydrostatic and uniaxial stress regimes, using a Teflon cell as a container in a conventional piston-cylinder device. Details of the technique and calibration procedure are described. The possibility of using high resistivity as-grown n-GaAs for pressure measurement is indicated. Piezoresistive effects in oriented n-Si plates were used to determine the nature of stress distribution in the pressure medium. The usefulness of the technique to semiconductor studies is pointed out.
12
Piezoresistance Effect in Germanium and Silicon
Charles S. Smith · Physical Review · 1954 · 2K citations
Transport Properties of a Many-Valley Semiconductor
Conyers Herring · Bell System Technical Journal · 1955 · 545 citations
Band Structure and Electron Transport of GaAs
Hannelore Ehrenreich · Physical Review · 1960 · 463 citations