MOVPE growth of spontaneously ordered (GaIn) and (AlIn)P layers lattice matched to GaAs substrates

Abstract

Abstract A systematic study of the metal‐organic vapour‐phase epitaxial growth of (GaIn)P and (AlIn)P layers deposited on GaAs substrates with (001) and (110) orientation is presented. Special attention has been paid to the growth on (001)‐oriented wafers with different misorientations to the growth direction. The influence of the growth conditions on the properties of the epitaxial layers such as lattice mismatch, alloy composition, photoluminescence (PL) wavelength, FWHMs of PL peaks and atomic ordering is discussed. Layers with mirrorlike surfaces and various degrees of order could be deposited at growth temperatures T g ranging from 595 °C to 750 °C for (GaIn)P and 720 °C to 800 °C for (AlIn)P. In addition to the influence of T g on the Ga incorporation during the (GaIn)P growth we found the Ga distribution coefficient k Ga to be affected by the misorientation of the substrates. k Ga correlates presumably with the number of kinks and steps on the substrate surface. Transmission electron diffraction (TED) and PL investigations show that the degree of order — often described by the ordering paramter η — depends strongly on T g the ordering is more pronounced when the layers are deposited on substrates misoriented towards the ( 1 11) lattice plane. Strong ordering has been observed for (GaIn)P samples grown at 680 °C on substrates 2° misoriented towards the [ 1 10] direction and at 650 °C on substrates 6° misoriented towards the same direction. For the (AlIn)P samples striking ordering has been found when they were grown at 720 °C.