Etching Behavior of the {110} and {100} Surfaces of InSb

Abstract

Preferential and nonpreferential etching characteristics of the {110} and {100} surfaces of were investigated. Since {111} facets develop in the etch figures of these surfaces, the morphology of the etch figures reflects the crystallographic polarity of along the 〈111〉 directions. Dislocation etch pits were found both on the {110} and on the {100} surfaces. The role of the relative reactivities of the various crystallographic planes in the over‐all etching behavior of and the effect of cold work are discussed.