Nano Letters · 2007 · 145 citations · 22 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsNanotechnologySemiconductor DevicesMetal-oxide-semiconductor Field-effect TransistorsNanoelectronicsNanostructured Electronic MaterialsNanowiresSemiconductor Device MaterialsSemiconductor NanomaterialsDigital Logic CircuitsLogic DevicesNanowire DevicesNanowire Field-effect TransistorsNanowire TransistorsSemiconductor NanowiresSubthreshold SwingThreshold Voltage
A high-performance NOT logic gate (inverter) was constructed by combining two identical n-channel metal-semiconductor field-effect transistors (MESFETs) made on a single CdS nanowire (NW). The inverter has a voltage gain as high as 83, which is the highest reported so far for inverters made on one-dimensional nanomaterials. The MESFETs used in the inverter circuit show excellent transistor performance, such as high on/off current ratio ( approximately 10(7)), low threshold voltage ( approximately -0.4 V), and low subthreshold swing ( approximately 60 mV/dec). With the assembly of three identical NW MESFETs, NOR and NAND gates have been constructed.
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The physics of semiconductor devices
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