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Optical nonlinearity in Hg<sub>0.84</sub>Cd<sub>0.16</sub>Te and Hg<sub>0.97</sub>Mn<sub>0.03</sub>Te
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1988
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Hg0.84cd0.16te Epitaxial LayerOptical MaterialsEngineeringNonlinear OpticsNonlinear EffectIi-vi SemiconductorOptical PropertiesNonlinear Wave PropagationQuantum MaterialsNonlinear MechanismOptical SystemsEpitaxial GrowthPhotonicsPhysicsNon-linear OpticOptical NonlinearityNonlinear CrystalsSemiconductor MaterialOptical PhysicApplied PhysicsOptoelectronics
We have observed a third‐order nonlinear optical susceptibility of 1.5×10−3 esu in a Hg0.84Cd0.16Te epitaxial layer which has a small open band gap at 80 K. The relaxation time for the nonlinear effect is estimated to be 5 ps, and identified as the thermalization time of the electrons. The nonlinear mechanism is different from the band filling effect observed in larger band‐gap HgCdTe samples, as evidenced by the different intensity dependence of the nonlinearity.