Microwave and Optical Technology Letters · 2012 · 20 citations · 23 references
EngineeringElectrical EngineeringMicrowave EngineeringPower ElectronicsWireless CommunicationsHigh-frequency Semiconductor DevicesMicrowave AmplifiersMicrowave Semiconductor DevicesPower AmplifiersWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsDoherty Power AmplifiersGallium Nitride Power AmplifiersGan-based High-frequency DevicesHarmonic TuningHigh-efficiency Power AmplifiersPower Amplifier DesignRadio Frequency Power AmplifiersSaturated Output Power
Abstract The article presents the design, realization, and experimental validation of a GaN‐based hybrid Doherty power amplifier for WiMAX base‐stations at 3.5 GHz. The amplifier exploits, for the first time as far as authors' knowledge goes, a second harmonic tuning scheme designed to further improve the efficiency in the Doherty region. The amplifier is based on a packaged GaN HEMT from Cree, and shows a saturated output power exceeding 43.2 dBm (21.5 W), a Doherty high‐efficiency region in excess of 6 dB output back‐off, with a first peak and maximum drain efficiency at saturation of 55 and 61%, respectively. The amplifier, with baseband digital predistortion, is compliant with the standard emission mask in the presence of a 9 dB peak to average power ratio WiMAX input and exhibits a weighted efficiency as high as 40%. The performances of the designed amplifier favorably compare with the state of the art for the same application. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:2601–2605, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27132
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A New High Efficiency Power Amplifier for Modulated Waves
W.H. Doherty · Proceedings of the IRE · 1936 · 1.1K citations
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