Thermoelectric Power in Amorphous Silicon

Abstract

Abstract An investigation is made of the temperature dependence of the Seebeck coefficient of vacuum‐deposited amorphous silicon (a‐Si) layers. The temperature dependence of the Fermi level is found to be in good agreement with previous studies of the temperature dependence of the electrical conductivity and the rectifying properties of n‐Si/a‐Si heterojunctions. The present results for a‐Si are compared with those for crystalline Si and crystalline and amorphous Ge.