Evaluation of the initial oxidation of heavily phosphorus doped silicon surfaces using angle-dependent X-ray photoelectron spectroscopy

The formation of hydrogen passivated silicon single-crystal surfaces using ultraviolet cleaning and HF etching

Takayuki Takahagi, Ichiro Nagai, A. Ishitani et al. · Journal of Applied Physics · 1988 · 495 citations

Engineering, Materials Engineering, Materials Science +17

SiSiO2 interface characterization by ESCA

Akitoshi Ishizaka, Seiichi Iwata, Yoshiaki Kamigaki · Surface Science · 1979 · 175 citations

Natural Sciences, Materials Science, Interface Science +7

Observation of phosphorus pile-up at the SiO2-Si interface

J. S. Johannessen, W. E. Spicer, J. F. Gibbons et al. · Journal of Applied Physics · 1978 · 63 citations

Engineering, Electrical Engineering, Materials Science +17

Properties of Thermal Oxides Grown on Phosphorus In Situ Doped Polysilicon

Marek Sternheim, E. Kinsbron, J. Alspector et al. · Journal of The Electrochemical Society · 1983 · 35 citations

Engineering, Materials Engineering, Materials Science +17

Mechanism of phosphorus pile-up in the Si-SiO2 interface

T. Kimura, M. Hirose, Y. Osaka · Journal of Applied Physics · 1984 · 20 citations

Engineering, Materials Engineering, Materials Science +9