Absorption edge measurements in tin disulphide thin films

Abstract

Thin films of tin disulphide have been prepared by the reactive evaporation of the individual components. It has been found that a sulphur flux of 1.5*1016 to 2.8*1016 molecules cm-2 s-1, a metal atom flux of 4*1014 to 1.5*1015 atoms cm-2 s-1, and a substrate temperature in the range 295-335K gives good stoichiometric films. Optical absorption studies indicate that the fundamental absorption edge arises due to an allowed indirect transition at 2.12+or-0.02 eV. An indirect allowed transition at 2.31+or-0.02 eV, not reported earlier, has also been detected.