Journal of Chemical & Engineering Data · 2005 · 15 citations · 5 references
Natural SciencesChemistryMaterials ScienceElectronic MaterialsSurface ScienceThermal AnalysisHigh-pressure ThermodynamicsThermal Properties Of SemiconductorsEquilibrium Vapor PressureExperimental Data CollectionMetalorganic Vapor Phase EpitaxyVapor Pressure
The vapor pressure of di- tert -butylsilane [CAS Registry No. 30736-07-3] to be used in metalorganic vapor phase epitaxy (MOVPE) was measured by a static method in the technologically important temperature range from (241 to 288) K. The experimental data were fitted by the Antoine equation. To the best of our knowledge, this is the first time that the vapor pressure measurements of di- tert -butylsilane are reported.
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Vapor pressure of metal organic precursors
Michal Fulem, Květoslav Růžička, Vlastimil Růžička et al. · Journal of Crystal Growth · 2002 · 34 citations