High-temperature observation of heavy-hole and light-hole excitons in InGaAs/InP multiple quantum well structures grown by metalorganic molecular beam epitaxy

Abstract

Heavy-hole (hh) and light-hole (lh) excitons were clearly observed at temperatures as high as 450 K in the optical absorption spectrum for the 1.5 μm wavelength range InGaAs/InP multiple quantum well (MQW) structures for the first time. Temperature dependence of the hh excitonic half-width was found to be weaker than that for InGaAs/InAlAs MQW structures. The MQW wafers were grown on (100) InP substrates by metalorganic molecular beam epitaxy (MOMBE) using trimethylindium, triethylgallium, arsine, and phosphine. Intense 77 K photoluminescence (PL) emission was also observed from the quantum well with thickness as narrow as 10 Å. The full width at half-maximum of 77 K PL spectrum for the 60 Å well as narrow as 11.7 meV and the double peak structures induced by the monolayer thickness fluctuation were observed in the thinner wells.