High-voltage field effect transistors with wide-bandgap <i>β</i>-Ga2O3 nanomembranes

TLDR

Nanoscale semiconductors have been studied for low‑power logic switches, yet power electronics still lack high‑voltage transistors, and nanotechnology has yet to impact this area despite its potential to miniaturize energy‑efficient power switches. The study demonstrates that gallium‑oxide nanomembranes can serve as high‑voltage transistor channels compatible with any platform. The authors fabricate gallium‑oxide nanomembrane channels that enable high‑voltage switching and platform integration. The results represent progress toward applying nanomaterial insights to the still‑unaddressed challenge of high‑voltage transistor design.

Abstract

Nanoscale semiconductor materials have been extensively investigated as the channel materials of transistors for energy-efficient low-power logic switches to enable scaling to smaller dimensions. On the opposite end of transistor applications is power electronics for which transistors capable of switching very high voltages are necessary. Miniaturization of energy-efficient power switches can enable the integration with various electronic systems and lead to substantial boosts in energy efficiency. Nanotechnology is yet to have an impact in this arena. In this work, it is demonstrated that nanomembranes of the wide-bandgap semiconductor gallium oxide can be used as channels of transistors capable of switching high voltages, and at the same time can be integrated on any platform. The findings mark a step towards using lessons learnt in nanomaterials and nanotechnology to address a challenge that yet remains untouched by the field.