Publication | Closed Access
Fabrication of 200-GHz f/sub max/ resonant-tunneling diodes for integration circuit and microwave applications
41
Citations
6
References
1989
Year
EngineeringProton ImplantationIntegrated CircuitsRoom-temperature Current DensitiesSemiconductor DeviceSemiconductorsElectronic DevicesRf SemiconductorNanoelectronicsElectronic EngineeringSemiconductor TechnologyElectrical EngineeringHigh-frequency DeviceMicroelectronicsMicrowave EngineeringApplied PhysicsIntegration CircuitTopside ContactsMicrowave Applications
Room-temperature current densities of 1.3*10/sup 5/ A/cm/sup 2/ and peak-to-valley ratios of 2.5 have been achieved for resonant tunneling diodes (RTDs) in the GaAs/AlAs material system. The devices were fabricated in a microwave-compatible process using topside contacts and a semi-insulating substrate to allow device integration. Proton implantation creates a nonconducting surface compatible with high-frequency coplanar transmission lines and other passive microwave structures.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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