Observation of the InP surface thermally cleaned in an arsenic flux using a scanning tunneling microscope

Abstract

An InP surface thermally cleaned in an arsenic flux was observed using an ultrahigh-vacuum scanning tunneling microscope (UHV-STM). In the STM image, about 1.6 nm period lines of 0.8 nm width with two rows were observed along the [110] direction. This result suggests that the surface comprises two In-In dimers and two missing dimers per (4×2) cells.