The impact of pseudomorphic AlAs spacer layers on the gate leakage current of InAl As/InGaAs heterostructure field-effect transistors

Abstract

Holes generated by impact ionization in the channels of InP-based heterostructure field-effect transistors can tunnel to the gate electrode and contribute to the parasitic gate current. By inserting pseudomorphic AlAs-spacer layers in order to increase the valence-band discontinuity, the channel-to-gate transfer rate of holes can be effectively reduced. © 1996 John Wiley & Sons, Inc.