Magnetic field effects in the plasma-enhanced chemical vapor deposition of boron nitride

Abstract

The effect of a low intensity magnetic field on the deposition rate of boron nitride films in a parallel plate plasma reactor was investigated. Operating impedance bridge measurements and optical emission spectroscopy were used to characterize the rf glow discharge consisting of diborane, ammonia, and hydrogen. The deposition rate was greater with the applied magnetic field at pressures below 400 mTorr, while at pressures above this value, the deposition rate was higher without magnetic field enhancement. These effects appear to be due to the change in ion flux and energy upon the application of the magnetic field.