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Very low resistance nonalloyed ohmic contacts using low-temperature molecular beam epitaxy of GaAs
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1995
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Materials ScienceMaterials EngineeringElectrical EngineeringElectronic DevicesSemiconductorsEngineeringSemiconductor Technologyω Cm2Applied PhysicsP-type GaasSemiconductor MaterialOptoelectronic DevicesOhmic ContactsLow ResistanceMolecular Beam EpitaxyNonalloyed Ohmic ContactsCompound SemiconductorSemiconductor Device
Ex situ nonalloyed ohmic contacts were made to n- and p-type GaAs using low-temperature molecular beam epitaxy. For n-type GaAs, Ag, and Ti/Au nonalloyed contacts displayed specific contact resistitivities of mid 10−7 Ω cm2. For p-type GaAs, nonalloyed Ti/Au contacts with specific contact resistivities of about 10−7 Ω cm2 were obtained.